Infineon AUIRF7341QTR: High-Performance Dual MOSFET for Automotive and Industrial Applications
The demand for robust and efficient power management solutions is paramount in modern automotive and industrial systems. Addressing this need, the Infineon AUIRF7341QTR stands out as a high-performance dual N-channel MOSFET that sets a new benchmark for power density and reliability. This device integrates two advanced HEXFET MOSFETs in a single PQFN 5x6mm package, offering a compact yet powerful solution for a wide range of switching applications.
Engineered to excel in harsh environments, the AUIRF7341QTR is AEC-Q101 qualified, making it an ideal choice for automotive applications such as electric power steering (EPS), braking systems, and transmission control units. Its dual-channel design allows for efficient half-bridge and full-bridge circuit configurations, which are critical for motor control and DC-DC converters. In industrial settings, this MOSFET is equally adept at driving high-current loads in power supplies, inverters, and automation equipment.
Key to its superior performance is the low typical on-resistance (RDS(on)) of just 2.3 mΩ at 10 V. This exceptionally low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. Combined with a high continuous drain current rating of 70 A per channel, the device ensures reliable operation under heavy load conditions. The use of Infineon’s advanced silicon technology also contributes to low gate charge, which enhances switching performance and allows for higher frequency operation, further optimizing the overall system efficiency.
The package itself is designed for maximum performance and reliability. The PQFN (Power Quad Flat No-Leads) package offers an extremely low thermal resistance, ensuring effective heat dissipation from the junction to the printed circuit board. This is crucial for maintaining device temperature within safe operating limits, thereby improving long-term reliability and power cycling capability. The package is also optimized for automated assembly processes, supporting high-volume manufacturing.
Furthermore, the device incorporates state-of-the-art protection features, including avalanche ruggedness and a wide operating temperature range. This ensures robust performance in the face of voltage spikes and in demanding environmental conditions, from under-the-hood automotive applications to factory floors.
ICGOOODFIND: The Infineon AUIRF7341QTR is a pinnacle of power semiconductor design, offering an exceptional blend of high current handling, ultra-low RDS(on), and superior thermal performance in a miniature footprint. Its automotive-grade qualification and dual-MOSFET integration make it a versatile and reliable cornerstone for designing next-generation power systems across automotive and industrial domains.
Keywords: Dual MOSFET, AEC-Q101 Qualified, Low RDS(on), Power Density, Thermal Performance.
