Infineon IKW25N120T2: A High-Performance TRENCHSTOP™ IGBT for Power Switching Applications

Release date:2025-10-31 Number of clicks:120

Infineon IKW25N120T2: A High-Performance TRENCHSTOP™ IGBT for Power Switching Applications

In the realm of power electronics, the quest for higher efficiency, greater reliability, and improved power density is relentless. Addressing these demands, Infineon Technologies introduces the IKW25N120T2, a robust 1200 V, 25 A IGBT that stands as a pinnacle of performance for a wide array of power switching applications. This device leverages Infineon's advanced TRENCHSTOP™ technology to set a new benchmark in the industry.

The core of the IKW25N120T2's superiority lies in its innovative cell design. The TRENCHSTOP™ structure significantly enhances overall performance by optimizing the trade-off between low saturation voltage (VCE(sat)) and switching losses. This results in exceptionally low conduction and switching losses, which directly translates to higher system efficiency and reduced thermal stress. For designers, this means the ability to operate at higher frequencies or with smaller heatsinks, ultimately leading to more compact and cost-effective designs.

A key feature of this IGBT is its co-packaged ultra-soft and fast recovery emitter-controlled diode. This integration is crucial for applications involving hard switching or free-wheeling operations, such as in inverters. The diode ensures minimal reverse recovery current and soft recovery behavior, which drastically reduces voltage overshoot and electromagnetic interference (EMI). This makes the device exceptionally reliable in demanding environments and simplifies the design of snubber circuits.

The IKW25N120T2 is ideally suited for a broad spectrum of applications. It is a preferred choice in motor drives, both for industrial and consumer appliances, uninterruptible power supplies (UPS), solar inverters, and welding equipment. Its high voltage rating and current capability make it perfect for systems operating from standard three-phase mains voltages.

Furthermore, the device boasts a wide reverse bias safe operating area (RBSOA) and short-circuit robustness, providing an essential safety margin in fault conditions. This ruggedness, combined with its high performance, ensures long-term system durability and minimizes the risk of unexpected failure.

In summary, the Infineon IKW25N120T2 is more than just a switching device; it is a comprehensive solution engineered to tackle the challenges of modern power conversion. By delivering an optimal balance of low losses, high switching speed, and built-in ruggedness, it empowers engineers to push the boundaries of their designs.

ICGOODFIND: A superior 1200V IGBT leveraging TRENCHSTOP™ technology for high efficiency, low losses, and robust performance in motor drives, UPS, and solar inverters.

Keywords: TRENCHSTOP™ IGBT, Power Switching, Low Saturation Voltage, Fast Recovery Diode, Motor Drives.

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