Infineon BSZ097N04LS: High-Efficiency N-Channel MOSFET for Advanced Power Management Applications
The relentless pursuit of higher efficiency, greater power density, and improved thermal performance is a constant driver in the world of electronics design. At the heart of many advanced power management systems, from high-speed DC-DC converters to sophisticated motor control units, lies the power MOSFET. The Infineon BSZ097N04LS stands out as a premier N-Channel MOSFET engineered specifically to meet these demanding challenges.
Built upon Infineon's advanced OptiMOS™ 40 V technology platform, this component represents a significant leap in performance. Its core strength lies in its exceptionally low figure-of-merit (F.o.M.), which is a key indicator of switching performance. This is achieved through a combination of an ultra-low gate charge (Qg) and a very low on-state resistance (R DS(on)). The BSZ097N04LS boasts a typical R DS(on) of just 0.97 mΩ, which directly translates to minimal conduction losses when the device is fully switched on. This allows for more current to be handled with reduced heat generation, enabling designers to create more compact solutions without compromising on power throughput or requiring excessive cooling.
Furthermore, the low gate charge facilitates extremely fast switching speeds. This is critical in high-frequency switching applications, such as synchronous rectification in switch-mode power supplies (SMPS) and voltage regulator modules (VRMs) for servers and telecom infrastructure. Faster switching reduces switching losses, a dominant source of inefficiency at high frequencies, thereby boosting the overall efficiency of the power conversion stage. The device's optimized internal structure also contributes to a low reverse recovery charge (Qrr), enhancing performance in hard-switching topologies.
The benefits extend beyond raw electrical specifications. The BSZ097N04LS is housed in a SuperSO8 package, which offers a superior thermal footprint compared to standard SO-8 packages. This allows for more effective heat dissipation away from the silicon die, supporting higher power operation and improving long-term reliability. Its leadless design also minimizes parasitic inductance, which is crucial for maintaining signal integrity in fast-switching circuits.
ICGOODFIND: The Infineon BSZ097N04LS is a high-performance N-Channel MOSFET that sets a high standard for efficiency in modern power management. Its standout features—exceptionally low R DS(on), minimal gate charge, and superior thermal performance—make it an ideal choice for designers aiming to maximize efficiency and power density in demanding applications like server power supplies, automotive systems, and industrial motor drives.
Keywords: OptiMOS™, Low R DS(on), High-Efficiency, Power Management, SuperSO8 Package.
